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PTF 10043 12 Watts, 1.9-2.0 GHz GOLDMOS (R) Field Effect Transistor
Description
The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 2.0 GHz, 26 Volts - Output Power = 12 Watts Min - Power Gain = 12 dB Typ at 3 Watts - Efficiency = 45% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability
*
Typical Output Power vs. Input Power
20
Output Power (Watts)
16 12 8 4 0 0.0 0.2 0.4 0.6 0.8 1.0
A-12
100
3456
9834
43
VDD = 26 V IDQ = 150 mA f = 2.0 GHz
Input Power (Watts)
Package 20222
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 26 V, POUT = 3 W, IDQ = 150 mA, f = 1.93, 2.0 GHz) Power Output at 1 dB Compressed (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz) Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.0 GHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps p-1dB hD Y
Min
11 12 40 --
Typ
12 14 45 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10043
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- -- 0.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 55 0.31 -40 to +150 3.2
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Efficiency
14
60
Gain Efficiency (%)
Output Power & Efficiency
16 15
Gain
60 50 40
12
50 40
10 8 6 4 2 1900
Gain
14 13 12 11 1750
VDD = 26 V IDQ = 150 mA
Output Pow er (W)
30 20
VCC = 26 V - 30 5 IDQ = 150 mA POUT = 10 W
Return Loss
20 -15 10 -25
1800
1850
1900
1950
2000
10 2050
1925
1950
1975
0 -35 2000
Frequency (MHz)
Frequency (MHz)
2
Return Loss (dB) Efficiency (%)
Broadband Test Fixture Performance
Gain (dB)
e
Output Power vs. Supply Voltage
20
0 -10
PTF 10043
Intermodulation Distortion vs. Output Power
VDD = 26 V, IDQ = 150 mA f1 = 1999.9 MHz, f2 = 2000.0 MHz
Output Power (Watts)
15
IMD (dBc)
-20 -30 -40 -50 -60
10
5
IDQ = 150 mA f = 2.0 GHz
0 22 24 26 28 30 32 34
-70 0 2.5 5 7.5 10 12.5 15
Supply Voltage (Volts)
Output Power (Watts-PEP)
Power Gain vs. Output Power
16 15
Capacitance vs. Supply Voltage *
50 45 40 35 30 25 20 15 10 5 0 0 10 3
Cds and Cgs (pF)
Power Gain (dB)
14 13 12 11 10 9 8 0.1
ICQ = 150 mA ICQ = 75 mA
Cgs
VGS =0 V f = 1 MHz
2.5
1.5
Cds Crss
20 30 40
1 0.5 0
ICQ = 37 mA
VDD = 26 V f = 2.0 GHz
1.0 10.0 100.0
Output Power (Watts)
Supply Voltage (Volts)
*This part is internally matched. Measurements of the finished product will not yield these figures.
Bias Voltage vs. Temperature
1.03 1.02
Bias Voltage (V)
1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 -20 0.15 1 1.85 0 20
Voltage nomalized to 1.0 V Series show current (A)
0.575 1.425 2.275 40 60 80 100
Temp. (C)
3
Crss (pF)
2
PTF 10043
Impedance Data
VDS = 26 V, POUT = 12 W, IDQ = 150 mA
e
D
Z Source
Z Load
Z0 = 50 W
G S
Frequency
GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R
Z Source W
jX -2.4 -2.7 -3.2 -3.1 -2.8 -2.5 -2.3 R 3.2 3.0 2.7 2.4 2.2 1.9 1.7 2.8 3.2 3.0 2.5 2.3 2.2 2.3
Z Load W
jX 1.9 1.5 0.9 0.4 0.0 -0.6 -1.1
Typical Scattering Parameters
(VDS = 28 V, ID = 500 mA)
f (MHz)
100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200
S11 Mag
0.912 0.917 0.951 0.964 0.971 0.974 0.975 0.975 0.980 0.979 0.981 0.977 0.975 0.965 0.951 0.929 0.904 0.885 0.892 0.918 0.942 0.964
S21 Ang
-143 -150 -163 -168 -171 -174 -175 -177 -178 -179 180 179 177 176 175 174 174 175 177 177 177 176
S12 Ang
86 80 53 39 28 20 12 6 0 -5 -11 -16 -23 -30 -39 -51 -68 -89 -113 -134 -151 -162 4
S22 Ang
0 -5 -16 0 65 94 98 95 93 92 89 86 83 82 80 78 74 70 67 61 54 56
Mag
14.7 11.5 5.83 3.71 2.63 1.99 1.56 1.26 1.07 0.932 0.846 0.790 0.763 0.759 0.782 0.828 0.880 0.884 0.802 0.650 0.489 0.366
Mag
0.007 0.006 0.004 0.002 0.002 0.003 0.006 0.008 0.010 0.012 0.014 0.015 0.017 0.019 0.021 0.023 0.025 0.027 0.029 0.030 0.028 0.025
Mag
0.641 0.650 0.750 0.824 0.881 0.931 0.952 0.950 0.951 0.948 0.959 0.965 0.970 0.972 0.974 0.975 0.986 1.00 1.02 1.02 1.01 1.01
Ang
-70 -82 -107 -122 -132 -139 -146 -151 -155 -158 -160 -162 -164 -166 -168 -169 -170 -171 -173 -175 -177 -178
e
Test Circuit
PTF 10043
Q1
Block Diagram for f = 2.0 GHz Q1 Z1, Z6 Z2, Z5 Z3 Z4 PTF 10043 50 W 50 W, 0.085 l 7.5 W, 0.154 l 7.9 W, 0.238 l RF LDMOS FET Microstrip Microstrip Microstrip Microstrip
Bias Parts (not shown on layout) R3 2K Potentiometer R4 10 W Resistor
C1, C4 C2, C3, C6, C8 C5, C7 C9
L1, L2
0.3-3.5 33 pF 0.1 mF, 50 V 100 mF, 50V
#20 AWG
Trim Capacitor Capacitor ATCB Capacitor Digi-Key P4917-ND Electrolytic Capacitor Digi-Key P5276
3 Turn, 0.12" I.D.
R1, R2
Circuit Board
500 W
.031" thick,
e r = 4.0, G200, AlliedSignal, 2 oz. copper
Resistor
e
10043
Parts Layout (not to scale) 5
PTF 10043
e
Artwork (not to scale)
Package Mechanical Specifications Package 20222
Ericsson Inc. Microelectronics Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1997, 1998, 1999, 2001 Ericsson Inc. EUS/KR 1522-PTF 10043 Uen Rev. A 01-16-01
6

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